Part number:
PHB12NQ15T
Manufacturer:
File Size:
111.85 KB
Description:
N-channel trenchmos transistor.
* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance SYMBOL VDSS = 150 V ID = 12.5 A g RDS(ON) ≤ 200 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technol
PHB12NQ15T Datasheet (111.85 KB)
PHB12NQ15T
111.85 KB
N-channel trenchmos transistor.
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