PHB12NQ15T Datasheet, Transistor, NXP

PHB12NQ15T Features

• Transistor
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance SYMBOL VDSS = 150 V ID = 12.5 A g RDS(ON) ≤ 200 mΩ s GENERA

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Part number:

PHB12NQ15T

Manufacturer:

NXP ↗

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111.85kb

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📄 Datasheet

Description:

N-channel trenchmos transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-

PHB12NQ15T Application

• Applications The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB12NQ15T is supplied in the SOT404 (D2PAK) surfac

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PHB12NQ15T

NXP

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