Part number:
PHB125N06T
Manufacturer:
File Size:
67.97 KB
Description:
Trenchmos transistor standard level fet.
* very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB125N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Total
PHB125N06T Datasheet (67.97 KB)
PHB125N06T
67.97 KB
Trenchmos transistor standard level fet.
📁 Related Datasheet
PHB125N06LT TrenchMOS transistor Logic level FET (NXP)
PHB129NQ04LT N-channel TrenchMOS logic level FET (NXP Semiconductors)
PHB12NQ15T N-channel TrenchMOS transistor (NXP)
PHB100N03LT N-channel enhancement mode field-effect transistor (NXP)
PHB101NQ03LT TrenchMOS logic level FET (NXP)
PHB101NQ04T N-channel TrenchMOS standard level FET (NXP Semiconductors)
PHB108NQ03LT TrenchMOS logic level FET (NXP)
PHB10N40 PowerMOS transistor (NXP)
PHB110NQ06LT N-channel TrenchMOS logic level FET (NXP Semiconductors)
PHB110NQ08LT N-channel TrenchMOS logic level FET (NXP Semiconductors)