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PHB125N06T - TrenchMOS transistor Standard level FET

PHB125N06T Description

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting.

PHB125N06T Applications

* PHB125N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 75 250 175 8 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DE

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TrenchMOS transistor Standard level FET NXP
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