PHB2N50E - PowerMOS transistors Avalanche energy rated

NXP

PHB2N50E Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

PHB2N50E Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHP2N50E, PHB2N50E, PHD2N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 2 A RDS(ON) ≤ 5 Ω s GENERAL DESCRIP

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PHB2N50E Datasheet Preview — Preview of PHB2N50E PDF

Datasheet Details

Part number: PHB2N50E
Manufacturer: NXP ↗
File Size: 75.27 KB
Datasheet: PHB2N50E_PhilipsSemiconductors.pdf
Description: PowerMOS transistors Avalanche energy rated

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PowerMOS transistors Avalanche energy rated NXP

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