PHB2N60E PowerMOS transistors Avalanche energy rated

NXP

Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

📥 Download Datasheet

PHB2N60E Datasheet Preview — Preview of PHB2N60E PDF

Datasheet Specifications

Part number: PHB2N60E
Manufacturer: NXP ↗
File Size: 94.75 KB
Datasheet: PHB2N60E_PhilipsSemiconductors.pdf
Description: PowerMOS transistors Avalanche energy rated

Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHP2N60E, PHB2N60E, PHD2N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 1.9 A RDS(ON) ≤ 6 Ω s GENERAL DESCR

PHB2N60E Distributors

📁 Related Datasheet

PHB222NQ04LT PHB225NQ04T PHB27NQ10T PHB29N08T PHB-5R0H155-R PHB-5R0H255-R

📌 All Tags

PHB2N60E PowerMOS transistors Avalanche energy rated NXP

NXP PHB2N60E-like datasheet