PHB2N60E - PowerMOS transistors Avalanche energy rated

NXP

PHB2N60E Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

PHB2N60E Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHP2N60E, PHB2N60E, PHD2N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 1.9 A RDS(ON) ≤ 6 Ω s GENERAL DESCR

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PHB2N60E Datasheet Preview — Preview of PHB2N60E PDF

Datasheet Details

Part number: PHB2N60E
Manufacturer: NXP ↗
File Size: 94.75 KB
Datasheet: PHB2N60E_PhilipsSemiconductors.pdf
Description: PowerMOS transistors Avalanche energy rated

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PowerMOS transistors Avalanche energy rated NXP

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