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PHB2N50 Datasheet - NXP

PHB2N50 PowerMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mod.

PHB2N50_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PHB2N50

Manufacturer:

NXP ↗

File Size:

59.96 KB

Description:

Powermos transistor.

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PHB2N50 PHB2N50 PowerMOS transistor NXP

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