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PHB2N50

PowerMOS transistor

PHB2N50 General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mod.

PHB2N50 Datasheet (59.96 KB)

Preview of PHB2N50 PDF

Datasheet Details

Part number:

PHB2N50

Manufacturer:

NXP ↗

File Size:

59.96 KB

Description:

Powermos transistor.

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PHB2N50 PowerMOS transistor NXP

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