PHB2N50 PowerMOS transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor PHB2N50 GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capabilit.

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Datasheet Specifications

Part number: PHB2N50
Manufacturer: NXP ↗
File Size: 59.96 KB
Datasheet: PHB2N50_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

PHB2N50 Distributors

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PHB2N50 PowerMOS transistor NXP

NXP PHB2N50-like datasheet