Part number:
PHB34NQ10T
Manufacturer:
File Size:
111.33 KB
Description:
N-channel trenchmos transistor.
* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance SYMBOL VDSS = 100 V ID = 35 A g RDS(ON) ≤ 40 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology
PHB34NQ10T Datasheet (111.33 KB)
PHB34NQ10T
111.33 KB
N-channel trenchmos transistor.
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