Datasheet4U Logo Datasheet4U.com

PHB36N06E Datasheet - NXP

PHB36N06E PowerMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain cu.

PHB36N06E Datasheet (55.07 KB)

Preview of PHB36N06E PDF
PHB36N06E Datasheet Preview Page 2 PHB36N06E Datasheet Preview Page 3

Datasheet Details

Part number:

PHB36N06E

Manufacturer:

NXP ↗

File Size:

55.07 KB

Description:

Powermos transistor.

📁 Related Datasheet

PHB30NQ15T N-channel TrenchMOS transistor (NXP)

PHB32N06LT N-channel MOSFET (nexperia)

PHB32N06LT N-channel enhancement mode field effect transistor (NXP Semiconductors)

PHB33NQ20T N-channel TrenchMOS standard level FET (NXP)

PHB33NQ20T N-channel MOSFET (nexperia)

PHB34NQ10T N-channel TrenchMOS transistor (NXP)

PHB37N06LT TrenchMOS transistor Logic level FET (NXP)

PHB37N06T TrenchMOS transistor Standard level FET (NXP)

TAGS

PHB36N06E PowerMOS transistor NXP

PHB36N06E Distributor