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PHB36N06E Datasheet - NXP

PHB36N06E PowerMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain cu.

PHB36N06E_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PHB36N06E

Manufacturer:

NXP ↗

File Size:

55.07 KB

Description:

Powermos transistor.

PHB36N06E Distributor

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PHB36N06E PHB36N06E PowerMOS transistor NXP