PHB36N06E PowerMOS transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

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Datasheet Specifications

Part number: PHB36N06E
Manufacturer: NXP ↗
File Size: 55.07 KB
Datasheet: PHB36N06E_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 60 41 125 175 38 UNIT V A

PHB36N06E Distributors

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PHB36N06E PowerMOS transistor NXP

NXP PHB36N06E-like datasheet