PHB37N06T TrenchMOS transistor Standard level FET

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting.

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Datasheet Specifications

Part number: PHB37N06T
Manufacturer: NXP ↗
File Size: 69.19 KB
Datasheet: PHB37N06T_PhilipsSemiconductors.pdf
Description: TrenchMOS transistor Standard level FET

Applications

* PHB37N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 37 100 175 35 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DES

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PHB37N06T TrenchMOS transistor Standard level FET NXP

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