PHB38N02LT Datasheet, Fet, NXP

PHB38N02LT Features

• Fet s Low on-state resistance s 2.5 V gate drive. 1.3 Applications s Linear regulator for DDR memory. 1.4 Quick reference data s VDS = 20 V s Ptot = 57.6 W s ID = 44.7 A s RDSon ≤ 16 mΩ

PDF File Details

Part number:

PHB38N02LT

Manufacturer:

NXP ↗

File Size:

252.61kb

Download:

📄 Datasheet

Description:

Trenchmos logic level fet. N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB38N02LT in SO

PHB38N02LT Application

• Applications s Linear regulator for DDR memory. 1.4 Quick reference data s VDS = 20 V s Ptot = 57.6 W s ID = 44.7 A s RDSon ≤ 16 mΩ 2. Pinning inf

TAGS

PHB38N02LT

NXP

📁 Related Datasheet

PHB30NQ15T - N-channel TrenchMOS transistor (NXP)
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP30NQ15T, PHB30NQ15T FEATURES • ’Trench’ technology • Very low on-s.

PHB32N06LT - N-channel MOSFET (nexperia)
PHB32N06LT N-channel TrenchMOS logic level FET Rev. 02 — 30 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level.

PHB32N06LT - N-channel enhancement mode field effect transistor (NXP Semiconductors)
.. PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor Rev. 01 — 06 November 2001 Product data 1. Description .

PHB33NQ20T - N-channel TrenchMOS standard level FET (NXP)
PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET Rev. 01 — 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standar.

PHB33NQ20T - N-channel MOSFET (nexperia)
PHB33NQ20T N-channel TrenchMOS standard level FET Rev. 02 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description Standard .

PHB34NQ10T - N-channel TrenchMOS transistor (NXP)
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP34NQ10T, PHB34NQ10T PHD34NQ10T QUICK REFERENCE DATA d FEATURES • ’.

PHB36N06E - PowerMOS transistor (NXP)
Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power trans.

PHB37N06LT - TrenchMOS transistor Logic level FET (NXP)
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F.

PHB37N06T - TrenchMOS transistor Standard level FET (NXP)
Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level .

PHB3N40E - PowerMOS transistors Avalanche energy rated (NXP)
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St.