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PHD2N60 Datasheet - NXP

PHD2N60 PowerMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mod.

PHD2N60_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PHD2N60

Manufacturer:

NXP ↗

File Size:

80.14 KB

Description:

Powermos transistor.

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PHD2N60 PHD2N60 PowerMOS transistor NXP

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