PHD2N60 PowerMOS transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor PHD2N60 GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capabilit.

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Datasheet Specifications

Part number: PHD2N60
Manufacturer: NXP ↗
File Size: 80.14 KB
Datasheet: PHD2N60_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

PHD2N60 Distributors

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PHD2N60 PowerMOS transistor NXP

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