PHD2N60E Transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

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PHD2N60E Datasheet Preview — Preview of PHD2N60E PDF

Datasheet Specifications

Part number: PHD2N60E
Manufacturer: NXP ↗
File Size: 94.75 KB
Datasheet: PHD2N60E_PhilipsSemiconductors.pdf
Description: Transistor

Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHP2N60E, PHB2N60E, PHD2N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 1.9 A RDS(ON) ≤ 6 Ω s GENERAL DESCR

PHD2N60E Distributors

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PHD2N60E Transistor NXP

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