PHN1011 Datasheet (NXP) - TrenchMOS transistor Logic level FET

PHN1011, TrenchMOS transistor Logic level FET

N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology.

The combination of very low on-state resistance and low switching losses make this device the optimum choice in high speed computer motherboard d.c.

to d.c.

converter

PHN1011 Features

* ’Trench’ technology

* Low on-state resistance

* Fast switching

* High thermal cycling performance

* Low-profile surface mount package

* Logic level compatible PHN1011 SYMBOL d QUICK REFERENCE DATA VDSS = 25 V ID = 11 A g RDS(ON) ≤ 11 mΩ (VGS = 10