PHN1011 TrenchMOS transistor Logic level FET

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET .
N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology.

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Datasheet Specifications

Part number: PHN1011
Manufacturer: NXP ↗
File Size: 115.61 KB
Datasheet: PHN1011_PhilipsSemiconductors.pdf
Description: TrenchMOS transistor Logic level FET

Features

* ’Trench’ technology
* Low on-state resistance
* Fast switching
* High thermal cycling performance
* Low-profile surface mount package
* Logic level compatible PHN1011 SYMBOL d QUICK REFERENCE DATA VDSS = 25 V ID = 11 A g RDS(ON) ≤ 11 mΩ (VGS = 10

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PHN1011 TrenchMOS transistor Logic level FET NXP

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