Datasheet Details
| Part number | PHN1013 |
|---|---|
| Manufacturer | NXP |
| File Size | 60.53 KB |
| Description | N-channel enhancement mode MOS transistor |
| Datasheet |
 PHN1013_PhilipsSemiconductors.pdf
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The PHN1013 is N-channel enhancement mode MOS transistor designed by NXP.
| Part number | PHN1013 |
|---|---|
| Manufacturer | NXP |
| File Size | 60.53 KB |
| Description | N-channel enhancement mode MOS transistor |
| Datasheet |
PHN1013_PhilipsSemiconductors.pdf
|
|
|
|
source source source gate drain drain drain drain 1 Top view 4 MAM358 PHN1013 DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package.handbook, halfpage 8 5 d g s Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDSon Tj PARAMETER drain-source voltage drain current (DC) total power dissipation drain-source on-state resistance junction temperature VGS = 10 V CONDITION
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