PHN203 Datasheet (NXP) - Dual N-channel enhancement mode TrenchMOS transistor

PHN203, Dual N-channel enhancement mode TrenchMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

The PHN203 is supplied in the SOT96-1 (SO8) surface mountin

PHN203 Features

* Dual device

* Low threshold voltage

* Fast switching

* Logic level compatible

* Surface mount package PHN203 SYMBOL d1 d1 d2 d2 QUICK REFERENCE DATA VDS = 25 V ID = 6.3 A RDS(ON) ≤ 30 mΩ (VGS = 10 V) RDS(ON) ≤ 55 mΩ (VGS = 4.5 V) s1 g1 s2 g2 GENERAL DESC