PHN203 Dual N-channel enhancement mode TrenchMOS transistor

NXP

Description

Philips Semiconductors Product specification Dual N-channel enhancement mode TrenchMOSTM transistor .
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

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Datasheet Specifications

Part number: PHN203
Manufacturer: NXP ↗
File Size: 98.60 KB
Datasheet: PHN203_PhilipsSemiconductors.pdf
Description: Dual N-channel enhancement mode TrenchMOS transistor

Features

* Dual device
* Low threshold voltage
* Fast switching
* Logic level compatible
* Surface mount package PHN203 SYMBOL d1 d1 d2 d2 QUICK REFERENCE DATA VDS = 25 V ID = 6.3 A RDS(ON) ≤ 30 mΩ (VGS = 10 V) RDS(ON) ≤ 55 mΩ (VGS = 4.5 V) s1 g1 s2 g2 GENERAL DESC

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PHN203 Dual N-channel enhancement mode TrenchMOS transistor NXP

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