PHN210T Dual N-channel TrenchMOS intermediate level FET

NXP

Description

PHN210T Dual N-channel TrenchMOS intermediate level FET Rev.02 * 15 December 2010 Product data sheet 1.Product profile 1.1 General descript.
Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

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Datasheet Specifications

Part number: PHN210T
Manufacturer: NXP ↗
File Size: 125.04 KB
Datasheet: PHN210T-NXP.pdf
Description: Dual N-channel TrenchMOS intermediate level FET

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PHN210T Dual N-channel TrenchMOS intermediate level FET NXP

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