PHN210 Dual N-channel enhancement mode TrenchMOS transistor

NXP

Description

Philips Semiconductors Product specification Dual N-channel enhancement mode TrenchMOSTM transistor .
Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Motor and relay driver.

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Datasheet Specifications

Part number: PHN210
Manufacturer: NXP ↗
File Size: 109.11 KB
Datasheet: PHN210_PhilipsSemiconductors.pdf
Description: Dual N-channel enhancement mode TrenchMOS transistor

Features

* Dual device
* Low threshold voltage
* Fast switching
* Logic level compatible
* Surface mount package PHN210 SYMBOL d1 d1 d2 d2 QUICK REFERENCE DATA VDS = 30 V ID = 3.4 A RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) s1 g1 s2 g2 GENERAL DE

Applications

* Motor and relay drivers
* d. c. to d. c. converters

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PHN210 Dual N-channel enhancement mode TrenchMOS transistor NXP

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