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PHN110 - N-channel enhancement mode MOS transistor

General Description

N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package.

4 n.c.

Fig.1 Simplified outline and symbol.

Key Features

  • High-speed switching.
  • No secondary breakdown.
  • Very low on-resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PHN110 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1996 Jul 16 File under Discrete Semiconductors, SC13b 1997 Jun 17 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification. 1 handbook, halfpage PHN110 DESCRIPTION N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. d d d d 5 8 PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL n.c s s g d d d d DESCRIPTION not connected source source gate drain drain drain drain 4 n.c. s s g MAM116 Fig.1 Simplified outline and symbol.