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PHN1018 - N-channel TrenchMOS transistor Logic level FET

General Description

N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology.

High frequency computer motherboard d.c.

to d.c.

converters The PHN1018 is supplied in the SOT96-1 (SO8) surface mounting package.

Key Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Low-profile surface mount package.
  • Logic level compatible PHN1018 SYMBOL d QUICK.

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible PHN1018 SYMBOL d QUICK REFERENCE DATA VDSS = 25 V ID = 9.6 A g RDS(ON) ≤ 18 mΩ (VGS = 10 V) RDS(ON) ≤ 21 mΩ (VGS = 5 V) s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. Application:• High frequency computer motherboard d.c. to d.c. converters The PHN1018 is supplied in the SOT96-1 (SO8) surface mounting package.