PHP112N06T - N-channel enhancement mode field-effect transistor

NXP

PHP112N06T Description

PHP112N06T; PHB112N06T N-channel enhancement mode ﬁeld-effect transistor Rev.01 * 07 March 2001 Product speciﬁcation 1..
N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using TrenchMOS™1 technology.

📥 Download Datasheet

PHP112N06T Datasheet Preview — Preview of PHP112N06T PDF

Datasheet Details

Part number: PHP112N06T
Manufacturer: NXP ↗
File Size: 262.60 KB
Datasheet: PHP112N06T_PhilipsSemiconductors.pdf
Description: N-channel enhancement mode field-effect transistor

📁 Related Datasheet

PHP110NQ06LT - N-channel TrenchMOS logic level FET (NXP Semiconductors)
PHP110NQ08LT - N-channel TrenchMOS logic level FET (NXP Semiconductors)
PHP110NQ08T - N-channel TrenchMOS standard level FET (NXP Semiconductors)
PHP119NQ06T - N-channel TrenchMOS standard level FET (NXP Semiconductors)
PHP101NQ04T - N-channel TrenchMOS standard level FET (NXP Semiconductors)
PHP120 - 7/500 & 15/000 Watt TVS Module (Semtech Corporation)
PHP129NQ04LT - N-channel TrenchMOS logic level FET (NXP Semiconductors)
PHP12N50E - PowerMOS transistors (Philips)

📌 All Tags

N-channel enhancement mode field-effect transistor NXP

NXP PHP112N06T-like datasheet

PHP11N06LT - N-channel TrenchMOS transistor Logic level FET
PHP11N50E - PowerMOS transistors Avalanche energy rated
PHP101NQ03LT - TrenchMOS logic level FET
PHP1025 - P-channel enhancement mode MOS transistor
PHP1035 - P-channel enhancement mode MOS transistor
PHP108NQ03LT - TrenchMOS logic level FET