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PVB42004X NPN microwave power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Se.
1 APPLICATIONS. Intended for use in common base class-B power amplifiers up to 4.

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Features

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime

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