PVB42004X

NPN microwave power transistor

NXP

PVB42004X Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime

PVB42004X General Description

1 APPLICATIONS

* Intended for use in common base class-B power amplifiers up to 4.2 GHz. 3 2 3 c b e MAM251 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the common base connected to the flange.

PVB42004X Datasheet (64.09 KB)

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Datasheet Details

Part number:

PVB42004X

Manufacturer:

NXP ↗

File Size:

64.09 KB

Description:

Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 File under Discrete Se.

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PVB42004X NPN microwave power transistor NXP

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PVB42004X Features

PVB42004X General Description

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