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PVB42004X Datasheet - NXP

PVB42004X_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PVB42004X

Manufacturer:

NXP ↗

File Size:

64.09 KB

Description:

Npn microwave power transistor.

PVB42004X, NPN microwave power transistor

1 APPLICATIONS * Intended for use in common base class-B power amplifiers up to 4.2 GHz.

3 2 3 c b e MAM251 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the common base connected to the flange

PVB42004X Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime

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