PVB42004X Datasheet - NXP

PVB42004X NPN microwave power transistor

1 APPLICATIONS * Intended for use in common base class-B power amplifiers up to 4.2 GHz. 3 2 3 c b e MAM251 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the common base connected to the flange.

PVB42004X Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime

PVB42004X Datasheet (64.09 KB)