* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry g
PZB16035U Datasheet (67.50 KB)
PZB16035U
67.50 KB
Npn microwave power transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
PZB16035U NPN microwave power transistor
Product specification Supersedes data of June 1992 File under Discrete Se.
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