RX1214B130Y Datasheet - NXP

RX1214B130Y - NPN microwave power transistors

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.

RX1214B80W; RX1214B130Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband ampliﬁer.

MODE OF OPERATION Class C RX1214B80W

RX1214B130Y Features

* Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor

* Diffused emitter ballasting resistors improve ruggedness

* Interdigitated emitter-base structure provides high emitter efficiency

* Gold metallization with barrier realizes ve

Datasheet Details

RX1214B130Y

87.62 KB

Npn microwave power transistors.

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