RX1214B130Y Datasheet - NXP

RX1214B130Y NPN microwave power transistors

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. RX1214B80W; RX1214B130Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband ampliﬁer. MODE OF OPERATION Class C RX1214B80W .

RX1214B130Y Features

* Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor

* Diffused emitter ballasting resistors improve ruggedness

* Interdigitated emitter-base structure provides high emitter efficiency

* Gold metallization with barrier realizes ve

RX1214B130Y_PhilipsSemiconductors.pdf