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RX1214B300Y NPN microwave power transistor

RX1214B300Y Description

DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product speciļ¬cation Supersedes data of June 1992 1997 Feb 19 Philips.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with the base connected to the flange.

RX1214B300Y Features

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry i

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