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RX1214B350Y NPN microwave power transistor

RX1214B350Y Description

DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product speciļ¬cation Superseded data of November 1994 1997 Feb 18 Phi.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.

RX1214B350Y Applications

* up to 1 ms/10%
* Internal input prematching networks allow an easier design of circuits
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure provides high emitter efficiency
* Gold metallization with barrier realizes very

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