RX1214B170W Datasheet - NXP

RX1214B170W - Microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.

ok, 4 columns RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband ampliﬁer.

MODE OF OPERATION Class C CONDITION

RX1214B170W Features

* Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor

* Diffused emitter ballasting resistors improve ruggedness

* Interdigitated emitter-base structure provides high emitter efficiency

* Gold metallization with barrier realizes ve

Datasheet Details

RX1214B170W

74.63 KB

Microwave power transistor.

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