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RX1214B170W Microwave power transistor

RX1214B170W Description

DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product speciļ¬cation Supersedes data of December 1994 1997 Feb 18 Philips.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.

RX1214B170W Applications

* up to 1 ms pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure provides high emitter efficiency
* Gold metallization with barrier realizes very stable characteristics and excellent lifetime

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