Part number:
RX1214B170W
Manufacturer:
File Size:
74.63 KB
Description:
Microwave power transistor.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.
ok, 4 columns RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.
MODE OF OPERATION Class C CONDITION
RX1214B170W Features
* Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor
* Diffused emitter ballasting resistors improve ruggedness
* Interdigitated emitter-base structure provides high emitter efficiency
* Gold metallization with barrier realizes ve
RX1214B170W_PhilipsSemiconductors.pdf
Datasheet Details
RX1214B170W
74.63 KB
Microwave power transistor.
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