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RX1214B170W Datasheet - NXP

RX1214B170W Microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. ok, 4 columns RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF OPERATION Class C CONDITION.

RX1214B170W Features

* Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor

* Diffused emitter ballasting resistors improve ruggedness

* Interdigitated emitter-base structure provides high emitter efficiency

* Gold metallization with barrier realizes ve

RX1214B170W_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

RX1214B170W

Manufacturer:

NXP ↗

File Size:

74.63 KB

Description:

Microwave power transistor.

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