Part number:
80NT3
Manufacturer:
Naina Semiconductor
File Size:
163.88 KB
Description:
Non-isolated thyristor module
Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
---|---|---|---|---|---|---|---|---|
![]() |
Acopian Power Supplies | W80NT310 | AC/DC or DC/DC CONVERTER | DigiKey | 0 | 25 units |
$564.38
|
🛒 Buy Now |
80NT3
Naina Semiconductor
163.88 KB
Non-isolated thyristor module
* Low voltage three-phase High surge current of 2500A @ 60Hz Easy construction Non-isolated Mounting base as common anode 80NT3 Voltage Ratings (TC = 25OC unless otherwise specified) Parameter Maximum repetitive peak reverse voltage Maximum non-repet
📁 Related Datasheet
80N02 - Power MOSFET
(ON Semiconductor)
NTD80N02 Power MOSFET
24 V, 80 A, N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power m.
80N03 - MOSFET
(GFD)
GOFORD
DESCRIPTION
The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide.
80N03L - SPB80N03L
(Siemens)
SPP80N03L SIPMOS® Power Transistor
Features • N channel
• Enhancement mode
Product Summary Drain source voltage Drain-Source on-state resistance Cont.
80N055 - NP80N055
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055CLE, NP80N055DLE, NP80N055ELE
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION These produ.
80N06 - N-Channel MOSFET
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
80N06
·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Fa.
80N06 - 60V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
80N06
Preliminary
80A, 60V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 80N06 is an N-channel MOSFET using UTC adva.
![]() |
Amphenol Corporation
|
112955-11 |
RF Connectors / Coaxial Connectors BNC SrtCrimPlugRG180 RG19,B1855AB821875Oh
|
TTI |
0 In Stock |
Qty : 100 units |
Unit Price : $2.8
|
🛒 Buy Now |