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MBR60045CT - Schottky Power Diode

MBR60045CT Description

Naina Semiconductor Ltd..

MBR60045CT Features

* Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak rever

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Datasheet Details

Part number
MBR60045CT
Manufacturer
Naina Semiconductor
File Size
185.37 KB
Datasheet
MBR60045CT_NainaSemiconductor.pdf
Description
Schottky Power Diode

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