N16T1618A1A Datasheet - NanoAmp Solutions

N16T1618A1A 16M Yltra Low Power CMOS PSRAM

3 A0 A3 A5 A17 2 OE UB I/O10 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2/ ZZ I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A19 WE CE1 CE2 ZZ OE LB UB I/O0-I/O15 VCC VSS VCCQ VSSQ DNU Pin Function Address Inputs Write Enable Input Chip Enable Input Chip Enable Input (o.

www.DataSheet4U.com NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1618C2(D1/A1)A Advance Information 16Mb Ultra-Low Power Asynchronous CMOS PSRAM 1M x 16 bit Overview The N16T1618C2(D1/A1)A is an integrated memory device containing a 16 Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1,048,576 words by 16 bits. It is designed to be compatible in operation and interface to standard 6T SR.

N16T1618A1A Features

* Dual voltage for Optimum Performance VCCQ and VSSQ for separate I/O power rails Vcc - 1.65V to 2.2 V Vccq - 1.65V to 3.6V

* Fast Cycle Times TACC < 85 nS

* Very low standby current ISB < 40µA @ 1.8V

* Very low operating current Icc < 25mA

* Memory expansion

N16T1618A1A_NanoAmpSolutions.pdf