N16T1618A1A - 16M Yltra Low Power CMOS PSRAM

NanoAmp Solutions

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Datasheet Details

Part number	N16T1618A1A
Manufacturer	NanoAmp Solutions
File Size	392.13 KB
Description	16M Yltra Low Power CMOS PSRAM
Datasheet	N16T1618A1A_NanoAmpSolutions.pdf

N16T1618A1A Product details

Description

3 A0 A3 A5 A17 2 OE UB I/O10 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2/ ZZ I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A19 WE CE1 CE2 ZZ OE LB UB I/O0-I/O15 VCC VSS VCCQ VSSQ DNU Pin Function Address Inputs Write Enable Input Chip Enable Input Chip Enable Input (only for CE2 device) Deep Sleep Input (only for A1 or D1 deep sleep device) Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Power I/O pin only Groun

Features

Dual voltage for Optimum Performance VCCQ and VSSQ for separate I/O power rails Vcc - 1.65V to 2.2 V Vccq - 1.65V to 3.6V.
Fast Cycle Times TACC < 85 nS.
Very low standby current ISB < 40µA @ 1.8V.
Very low operating current Icc < 25mA.
Memory expansion with CE and OE.
Automatic power down mode.
48-Pin VFBGA, Wafers Available Product Family Part Number N16T1618C2AZ N16T1618D1AZ N16T1618A1AZ Feature 2 CE Deep Sleep Disabled Deep Sl.

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