N16T1618A1A Datasheet (NanoAmp Solutions) - 16M Yltra Low Power CMOS PSRAM

N16T1618A1A, 16M Yltra Low Power CMOS PSRAM

3 A0 A3 A5 A17 2 OE UB I/O10 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2/ ZZ I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A19 WE CE1 CE2 ZZ OE LB UB I/O0-I/O15 VCC VSS VCCQ VSSQ DNU Pin Function Address Inputs Write Enable Input Chip Enable Input Chip Enable Input (o

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1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1618C2(D1/A1)A Advance Information 16Mb Ultra-Low Power Asynchronous CMOS PSRAM 1M x 16 bit Overview The N16T1618C2(D1/A1)A is an integrated memory device containing a 16 Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1,048,576 words by 16 bits.

It is designed to be compatible in operation and interface to standard 6T SR

N16T1618A1A Features

* Dual voltage for Optimum Performance VCCQ and VSSQ for separate I/O power rails Vcc - 1.65V to 2.2 V Vccq - 1.65V to 3.6V

* Fast Cycle Times TACC < 85 nS

* Very low standby current ISB < 40µA @ 1.8V

* Very low operating current Icc < 25mA

* Memory expansion