N16T1630C2B Datasheet (NanoAmp Solutions) - 16Mb Ultra-Low Power Asynchronous CMOS SRAM

N16T1630C2B, 16Mb Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A19 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A

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1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1630C2B 16Mb Ultra-Low Power Asynchronous CMOS SRAM 1M x 16 bit Overview The N16T1630C2B is an integrated memory device containing a low power 16 Mbit SRAM built using a self-refresh DRAM array organized as 1,024,576 words by 16 bits.

It is designed to be identical in operation and interface to standard 6T SRAMS.

The device is designed for low standby and op

N16T1630C2B Features

* Single Wide Power Supply Range 2.7 to 3.6 Volts

* Very low standby current 100µA at 3.0V (Max)

* Very low operating current 2.0mA at 3.0V and 1µs (Typical)

* Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Ena