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2N5199 - N-Channel Monolithic Dual JFETs

This page provides the datasheet information for the 2N5199, a member of the 2N5196 N-Channel Monolithic Dual JFETs family.

Description

match.

(Derate 2.

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Datasheet preview – 2N5199

Datasheet Details

Part number 2N5199
Manufacturer National Semiconductor
File Size 32.76 KB
Description N-Channel Monolithic Dual JFETs
Datasheet download datasheet 2N5199 Datasheet
Additional preview pages of the 2N5199 datasheet.

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Full PDF Text Transcription

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Process 83 2N51 96-99 N-Channel Monolithic Dual JFETs General Description The 2N5196thru 2N5199 series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifiers requiring low leakage and tight match. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Device Dissipation (Each Side), T/ = 85°C (Derate 2.56 mW/°C) -50V 50 mA 250 mW Total Device Dissipation, Ta = 85°C (Derate 4.3 mW/°C) 500 mW Storage Temperature Range Lead Temperature (1/16" from case for 10 seconds) 65°Cto+200°C a 300 C 0175- 0195 " (4445 -4.9531 0.209 0.230 (5.309 SM2! 0170-0.210 (4.318 5T334) SLATIMG PLANE mnr 016 -0 019 ddq] 0.030 PIN FET (12) 1 SI 2 D1 3 G1 5 S2 6 D2 7 G2 0.028-0.
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