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2N5564 Datasheet N-Channel Monolithic Dual JFET

Manufacturer: National Semiconductor (now Texas Instruments)

General Description

The 2N/NPD5564 thru 2N/NPD5566 series of N-channel monolithic dual JFETs is designed for broadband low noise differential amplifier or applications requiring dual matched moderate ON resistance analog switches.

Absolute Maximum Ratings (25°o Gate-to-Gate Voltage ±40V Gate-Drain or Gate-Source Voltage -40V Gate Current 50 m A Device Dissipation (Each Side), Ta = 25°C (Derate 2.2 mW/°C) 325 mW Total Device Dissipation, Ta = 25°C (Derate 3.3 mW/°C) 650 mW Storage Temperature Range -65°C to +200°C Lead Temperature (1/16" from case for 10 seconds) 300 C Innf i Molded Dual-in-Line Package (N) ' •'•••' r.ii~i hi i ™ utlj lij l'l Mf PIN FET 1 S1 2 D1 3 G1 5 S2 6 D2 7 G2 PIN FET 1 S1 2 D1 3 IMC 4 G1 5 S2 6 D2 7 NC 8 G2 Electrical Characteristics (25 C unless otherwise noted) Gate-Reverse Current CONDITIONS V G S--20V,V DS = bvgss VGS(OFF) VGS(f) Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current Static Drain Source "ON" Resistance Common-Source Forward Transconductance (Note 1) Common-Source Output Conductance Common-Source Reverse Transfer Capacitance Common-Source Input Capacit Spot Noise Figure !G = -lMA, V DS = VdS= 15V, Dl = J nA VDS-OV, Gl = 2mA VDS= 15V, V G S = 0, (Note 1) lD= 1 mA, V G S- Vqg = 15V, Id = 2 mA Equivalent Input Noise Voltage Matching Characteristics PARAMETER CONDITIONS NPD/2N5565 NPD/2N5566 [DSS[ 'DSS2 Saturation Drain Current Ratio VDS- 15V.

Vgs-0, (Note 11 |VGSrVQS2 l Differential GateSourc Voltage AlVG S1~ v GS2 ;

Overview

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