M29W800DT - 3V supply flash memory
M29W800DT Features
* Supply voltage
* VCC = 2.7 V to 3.6 V for program, erase and read
* Access times: 45, 70, 90 ns
* Programming time
* 10 μs per byte/word typical
* 19 memory blocks
* 1 boot block (top or bottom location)
* 2 parameter and 16 main bloc
