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M29W800AB Datasheet - ST Microelectronics

M29W800AB 8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de.

M29W800AT M29W800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word Status Register bits and Ready/Busy Output 1 44 s s s s s s SECURITY PROTECTION MEMORY AREA INSTRUCTION ADDRESS CODING: 3 digits MEMORY BLOCKS Boot Block (Top or Bottom location.

M29W800AB Features

* h-4FFFFh 40000h-47FFFh 38000h-3FFFFh 30000h-37FFFh 28000h-2FFFFh 20000h-27FFFh 18000h-1FFFFh 10000h-17FFFh 08000h-0FFFFh 00000h-07FF

M29W800AB Datasheet (234.79 KB)

M29W800AB Datasheet Preview — Preview of M29W800AB PDF

Datasheet Details

Part number:

M29W800AB

Manufacturer:

STMicroelectronics ↗

File Size:

234.79 KB

Description:

8 mbit 1mb x8 or 512kb x16 / boot block low voltage single supply flash memory.

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M29W800AB Mbit 1Mb 512Kb x16 Boot Block Low Voltage Single Supply Flash Memory ST Microelectronics

M29W800AB Distributor