M29W800B Datasheet - ST Microelectronics

M29W800B 8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory

The M29W800 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The devic.

M29W800T M29W800B 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W800T and M29W800B are replaced respectively by the M29W800AT and M29W800AB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 90ns FAST PROGRAMMING TIME 10µs by Byte / 20µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word Status Register bits and Ready/Busy Output MEMORY BLOC.

M29W800B Features

* 8000h-7BFFFh 7C000h-7CFFFh 7D000h-7DFFFh 7E000h-7FFFFh A18 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 A17 0 0 0 0 1 1 1 1 0 0 0 1 1 1 1 1 1 1 1 A1

M29W800B_STMicroelectronics.pdf

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Datasheet Details

Part number:

M29W800B

Manufacturer:

STMicroelectronics ↗

File Size:

233.15 KB

Description:

8 mbit 1mb x8 or 512kb x16 / boot block low voltage single supply flash memory.

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M29W800B M29W800B Mbit 1Mb 512Kb x16 Boot Block Low Voltage Single Supply Flash Memory ST Microelectronics

M29W800B Distributor