20N60A4D - HGTG20N60A4D
(Fairchild Semiconductor)
HGTG20N60A4D
Data Sheet February 2009
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high voltag.
20N60A - IGBT
(IXYS)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
20N60A - N-channel MOSFET
(JieJie)
Description
JMP N-channel MOSFET
Features
600V,20A RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A Fast Switching Improved dv/dt Capability 100% .
20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET
(ROUM)
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.
20N60 - IGBT
(IXYS)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
20N60 - 600V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 20N60
20A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 20N60 is an N-channel enhancement mode power MOSFET using .