Part number:
20N60A4D
Manufacturer:
File Size:
381.10 KB
Description:
N-channel igbt.
20N60A4D Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. Th
20N60A4D Datasheet (381.10 KB)
Datasheet Details
20N60A4D
381.10 KB
N-channel igbt.
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