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2N5883 - Complementary Silicon High-Power Transistors

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ON Semiconductor

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2N5883 Complementary Silicon High-Power Transistors by ON Semiconductor - Datasheet Preview — Datasheet preview – 2N5883

Datasheet Details

Part number	2N5883
Manufacturer	ON Semiconductor
File Size	116.11 KB
Description	Complementary Silicon High-Power Transistors
Datasheet	2N5883 Datasheet
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Features

http://onsemi. com.
Low Collector.
Emitter Saturation Voltage.
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain.
hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product.
ft = 4.0 MHz (min) at IC = 1.0 Adc Pb.
Free Packages are Available.
25 AMPERE.

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Published: Apr 2, 2007 |