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2N5883 Complementary Silicon High-Power Transistors

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Description

www.DataSheet4U.com 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High *Power Trans.

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Features

* http://onsemi. com
* Low Collector
* Emitter Saturation Voltage
* VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain
* hFE = 20 (min) at IC = 10 Adc High C

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