2N5885 Features
* http://onsemi.com
* Low Collector
* Emitter Saturation Voltage
* VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain
* hFE = 20 (min) at IC = 10 Adc High C
Datasheet Details
2N5885, 2N5883
120.81 KB
Complementary silicon high-power transistors.
This datasheet PDF includes multiple part numbers: 2N5885, 2N5883.
Please refer to the document for exact specifications by model.
2N5885 Distributor
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