2N5885 Datasheet - ON Semiconductor

2N5885 Complementary Silicon High-Power Transistors

2N5885 Features

* http://onsemi.com

* Low Collector

* Emitter Saturation Voltage

* VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain

* hFE = 20 (min) at IC = 10 Adc High C

Datasheet Details

2N5885

120.81 KB

Complementary silicon high-power transistors.

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