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2SC4488 - Bipolar Transostor

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Features

  • http://onsemi. com Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1708 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--)120 (--)100 (--)6 (--)1 (--.

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Datasheet Details

Part number 2SC4488
Manufacturer ON Semiconductor
File Size 641.13 KB
Description Bipolar Transostor
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Ordering number : EN3094B 2SA1708/2SC4488 Bipolar Transistor (-)100V, (-)1A, Low VCE(sat), (PNP)NPN Single NMP Features • • • http://onsemi.com Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1708 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--)120 (--)100 (--)6 (--)1 (--)2 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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