2SC4480 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC4480
Manufacturer	Sanyo Semicon Device
File Size	97.66 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC4480_SanyoSemiconDevice.pdf

Large current capacity.
Adoption of MBIT process.
High DC current gain.
Low collector-to-emitter saturation voltage.
High VEBO. Package Dimensions unit:mm 2064A [2SC4480] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Stora.

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Published: Mar 22, 2005 |