2SC4485 - PNP/NPN Epitaxial Planar Silicon Transistors

Datasheet Summary

Features

Adoption of FBET process.
Fast switching speed. Package Dimensions unit:mm 2064 [2SA1705/2SC4485] ( ) : 2SA1705 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff.

Sanyo Semicon Device

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Datasheet Details

Part number	2SC4485
Manufacturer	Sanyo Semicon Device
File Size	122.48 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC4485 Datasheet
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Full PDF Text Transcription

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Ordering number:EN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications · Voltage regulators, relay drivers, lamp drivers. Features · Adoption of FBET process. · Fast switching speed.

Published: Mar 22, 2005 |