Datasheet4U Logo Datasheet4U.com

2SC4489 - Bipolar Transistor

Datasheet Summary

Features

  • Adoption of FBET, MBIT processes.
  • Fast switching speed.
  • High breakdown voltage, large current capacity ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings (--)120 (--)100 (--)6 (--)2 (--)3 1 150 --.

📥 Download Datasheet

Datasheet preview – 2SC4489

Datasheet Details

Part number 2SC4489
Manufacturer ON Semiconductor
File Size 552.34 KB
Description Bipolar Transistor
Datasheet download datasheet 2SC4489 Datasheet
Additional preview pages of the 2SC4489 datasheet.

📁 Similar Datasheet

  • 2SC4489 - PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC4480 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC4481 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC4482 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC4483 - PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC4484 - NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC4485 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC4486 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC4487 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC4488 - NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
Other Datasheets by ON Semiconductor
  • 2SC4482 - Bipolar Transistor
  • 2SC4487 - Bipolar Transistor
  • 2SC4488 - Bipolar Transostor
  • 2SC4002 - NPN Triple Diffused Planar Silicon Transistor
  • 2SC4027 - Bipolar Transistor
  • 2SC4134 - Bipolar Transistor
  • 2SC4135 - Bipolar Transistor
  • 2SC4399 - NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription

Click to expand full text
Ordering number : EN3096A 2SA1709/2SC4489 Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP http://onsemi.com Features • Adoption of FBET, MBIT processes • Fast switching speed • High breakdown voltage, large current capacity ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings (--)120 (--)100 (--)6 (--)2 (--)3 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
Published: |