* Adoption of MBIT process.
* Large current capacitance.
* Low collector-to-emitter saturation voltage.
* High-speed switching.
* High allowable power dissipation. Specifications ( ) : 2SA2197 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base V
2SC6102
98.04 KB
Pnp / npn epitaxial planar silicon transistors.
2SA2197 / 2SC6102 Ordering number : ENA0463 2SA2197 / 2SC6102 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applicat.
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