AFGB30T65RQDN Datasheet - ON Semiconductor

AFGB30T65RQDN IGBT

AFGB30T65RQDN Features

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Coefficient for Easy Parallel Operation

* High Current Capability

* Low Saturation Voltage: VCE(Sat) = 1.58 V (Typ.) @ IC = 30 A

* 100% of the Parts Tested for ILM (Note 2)

* High Input

Datasheet Details

AFGB30T65RQDN

241.09 KB

Igbt.

📁 Related Datasheet

AFGB30T65SQDN IGBT (ON Semiconductor)

AFGB20N60SFD-BW IGBT (ON Semiconductor)

AFGB40T65RQDN IGBT (ON Semiconductor)

AFGB40T65SQDN IGBT (ON Semiconductor)

AFGBG70T65SQ IGBT (onsemi)

AFGHL25T120RHD IGBT (ON Semiconductor)

AFGHL25T120RLD IGBT (ON Semiconductor)

AFGHL30T65RQDN IGBT (ON Semiconductor)

TAGS

AFGB30T65RQDN IGBT ON Semiconductor

AFGB30T65RQDN Distributor