AFGB30T65RQDN Datasheet - ON Semiconductor

Datasheet Details

Part number:

AFGB30T65RQDN

Manufacturer:

File Size:

241.09 KB

Description:

Igbt.

AFGB30T65RQDN, IGBT

AFGB30T65RQDN Features

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Coefficient for Easy Parallel Operation

* High Current Capability

* Low Saturation Voltage: VCE(Sat) = 1.58 V (Typ.) @ IC = 30 A

* 100% of the Parts Tested for ILM (Note 2)

* High Input

📁 Related Datasheet

📌 All Tags

ON Semiconductor AFGB30T65RQDN-like datasheet