AFGB30T65SQDN Datasheet - ON Semiconductor

AFGB30T65SQDN IGBT

AFGB30T65SQDN Features

* Maximum Junction Temperature: TJ = 175°C

* High Speed Switching Series

* VCE(sat) = 1.6 V (typ.) @ IC = 30 A

* Low VF Soft Recovery Co

* packaged Diode

* AEC

* Q101 Qualified

* 100% of the Parts are Dynamically Tested (Note 1) Typical App

Datasheet Details

AFGB30T65SQDN

226.78 KB

Igbt.

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