AFGB40T65RQDN Datasheet - ON Semiconductor

AFGB40T65RQDN IGBT

AFGB40T65RQDN Features

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Coefficient for Easy Parallel Operation

* High Current Capability

* Low Saturation Voltage: VCE(Sat) = 1.55 V (Typ.) @ IC = 40 A

* 100% of the Parts Tested for ILM (Note 2)

* High Input

Datasheet Details

AFGB40T65RQDN

241.35 KB

Igbt.

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