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AFGB40T65RQDN IGBT

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Description

IGBT for Automotive Applications 650 V, 40 A AFGB40T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum .

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Features

* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Coefficient for Easy Parallel Operation
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.55 V (Typ. ) @ IC = 40 A
* 100% of the Parts Tested for ILM (Note 2)
* High Input

AFGB40T65RQDN Distributors

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