AFGB40T65SQDN Datasheet - ON Semiconductor

AFGB40T65SQDN IGBT

AFGB40T65SQDN Features

* Maximum Junction Temperature: TJ = 175°C

* High Speed Switching Series

* VCE(sat) = 1.6 V (Typ.) @ IC = 40 A

* 100% of the Part are Dynamically Tested (Note 1)

* AEC

* Q101 Qualified

* These Devices are Pb

* Free and are RoHS Compliant Ty

Datasheet Details

AFGB40T65SQDN

267.23 KB

Igbt.

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