AFGY120T65SPD Datasheet - ON Semiconductor

AFGY120T65SPD IGBT

AFGY120T65SPD Features

* AEC

* Q101 Qualified

* Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 120 A

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Co

* efficient for Easy Parallel Operating

* Tight Parameter Distribution

* High In

Datasheet Details

AFGY120T65SPD

350.10 KB

Igbt.

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AFGY120T65SPD IGBT ON Semiconductor

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