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AFGY120T65SPD-B4 Datasheet - ON Semiconductor

IGBT

* AEC

* Q101 Qualified and PPAP Capable

* Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 120 A

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Co

* Efficient

* Tight Parameter Distribution

* High Input Impedan

AFGY120T65SPD-B4

1.57 MB

Igbt.

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AFGY120T65SPD-B4 IGBT ON Semiconductor

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