AFGY120T65SPD-B4 IGBT

ON Semiconductor

Description

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A AFGY120T65SPD-B4 .

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Datasheet Specifications

Part number: AFGY120T65SPD-B4
Manufacturer: ON Semiconductor ↗
File Size: 1.57 MB
Datasheet: AFGY120T65SPD-B4-ONSemiconductor.pdf
Description: IGBT

Features

* AEC
* Q101 Qualified and PPAP Capable
* Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ. ) @ IC = 120 A
* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* Efficient
* Tight Parameter Distribution
* High Input Impedan

Applications

* Rugged Transient Reliability
* Outstanding Parallel Operation Performance with Balance Current Sharing
* Low EMI Applications
* Traction Inverter for HEV/EV
* Auxiliary DC/AC Converter
* Motor Drives
* Other Power
* Train Applications R

AFGY120T65SPD-B4 Distributors

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AFGY120T65SPD-B4 IGBT ON Semiconductor

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