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AFGY120T65SPD-B4 - IGBT

ON Semiconductor

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Datasheet Details

Part number	AFGY120T65SPD-B4
Manufacturer	ON Semiconductor ↗
File Size	1.57 MB
Description	IGBT
Datasheet	AFGY120T65SPD-B4-ONSemiconductor.pdf

AFGY120T65SPD-B4 Product details

Features

AEC.
Q101 Qualified and PPAP Capable.
Very Low Saturation Voltage: VCE(sat) = 1.5 V (Typ. ) @ IC = 120 A.
Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
Efficient.
Tight Parameter Distribution.
High Input Impedance.
100% of the Parts are Dynamically Tested.
Short Circuit Ruggedness > 6 ms @ 25°C.
Copacked with Soft, Fast Recovery Extremefast Diode.
This Device is Pb.

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Published: Oct 3, 2022 |