* High DC Current Gain
* hFE = 2500 (typ.) at IC = 4.0
* Collector
* Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min)
* BDX33B, BDX334B = 100 Vdc (min)
* BDX33C, BDX334C
* Low Collector
* Emitter Saturation Voltage VCE(sat) =
BDX34B
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Darlington complementary silicon power transistors.
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low s.
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