BDX54B - Plastic Medium-Power Complementary Silicon Transistors

Product Overview

ON Semiconductor

Part number	BDX54B
Manufacturer	ON Semiconductor
File Size	102.23 KB
Description	Plastic Medium-Power Complementary Silicon Transistors
Datasheet	BDX54B Datasheet
Additional preview pages of the BDX54B datasheet.

High DC Current Gain.
hFE = 2500 (Typ) @ IC = 4.0 Adc.
Collector Emitter Sustaining Voltage.
@ 100 mAdc VCEO(sus) = 80 Vdc (Min).
BDX53B, 54B VCEO(sus) = 100 Vdc (Min).
BDX53C, 54C.
Low Collector.
Emitter Saturation Voltage.
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc.
Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors.
These D.

📁 Similar Datasheet

BDX54 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
BDX54A - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
BDX54C - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (STMicroelectronics)
BDX54F - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (STMicroelectronics)
BDX53 - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
BDX53A - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
BDX53B - Plastic Medium-Power Complementary Silicon Transistors (Motorola Inc)
BDX53BFP - SILICON POWER DARLINGTON TRANSISTOR (ST Microelectronics)

Other Datasheets by ON Semiconductor

Published: Mar 23, 2005 |